r semiconductor sd103a th u SD103C r small signal schottky diodes features mechanical data absolute ratings(limiting values) electrical characteristics for general purpose applications the sd103 series is a metal-on-silicon junction schottky barrier device which is protected by a pn junction guard ring.the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing, and coupling diodes for fast switching and low logic le vel applications. other applications are click suppressions, efficient full wavebridges in telephone subsets, and blocking diodes in re chargeable low voltage battery systems. these diodes are also available in the minimelf case with the type designation ll103a to thru ll103c. leakage current at v =30v r v =20v v =10v r r forward voltage drop at i =20ma i =200ma f f 0.37 0.6 5 5 5 50 10 reverse recovery time at i =i =50ma,recover to 200ma recover to 0.1 r fr i junction capacitance at v =0v ,f=1mhz r v rrm v rrm v rrm mw a v v v t stg p tot t j power dissipation (infinite heat sink) peak reverse voltage storage temperature range junction temperature maximum single cycle surge 60hz sine wave -55 to+150 v v a a a pf ns i fsm v f v f i r i r i r c j t rr 125 15 400 1) 40 30 20 do-35 dimensions in inches and (millimeters) 0.150(3.8) max 1.083(27.5) min 1.083(27.5) min 0.079(2.0) max dia 0.020(0.52) max dia case do-35 glass case weight approx. 0.13 gram : : 1) valid provided that leads at a distance of 4mm from case are kept at ambient temperature thermal resistance,junction to ambient r ja 1) valid provided that electrodes are kept at ambient temperature w c/ 300 1) symbols units value min. typ. max. unis symbols sd103a sd103b SD103C sd103a sd103b SD103C jinan jingheng electronics co., ltd. http www.jinghenggroup.com :// 31 - high temperature soldering guaranteed 260c 10 seconds at terminals :/ component in accordance to rohs 2011 65 eu // c c (ratings at 25c ambient temperature unless otherwise specified)
ratings and characteristics curves sd103a thru SD103C 0 0.5 10 20 30 40 50v 1 1.5v 10 10 10 10 10 10 10 10 1 1 10 10 10 10 10 10 -2 -2 -3 -3 -2 -1 -1 -1 3 3 2 2 0 0 1 2 3 4 0.5 1v 5 (ma) a a ms a tj= 25c figure 1. typical variation of fwd.current vs.fwd. voltage for primary conduction through the schottky barrier figure 2. typical high current forward conduction curve t =300ms,duty cycle=2% p figure 4. typical variation of reverse current at various temperatures v f v f v r i f i f i r 0 10 20 30 40 50 110 figure 3. typical non repetitive forward surge current versus pulse width t p i f 25 c 50 c 75 c 100 c 125 c jinan jingheng electronics co., ltd. http www.jinghenggroup.com :// 32 -
0 10 20 30 40 50 100 100ma 200ma 400ma 200 c v pf figure 5. blocking voltage deration versus temperature at various average forward currents t amb v r 10 20 30 40 50v 0 1 2 2 3 3 4 4 5 5 7 7 10 100 figure 6. typical capacitance versus voltage reverse v r c j ratings and characteristics curves sd103a thru SD103C jinan jingheng electronics co., ltd. http www.jinghenggroup.com :// 33 -
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